The Interface between Polysilicon and Monocrystalline Silicon: Interface Layer and Electrical Characteristic |
| Journal |
Materials Science Forum (Volumes 155 - 156) |
| Volume |
Reactive Phase Formation at Interfaces and Diffusion Processes |
| Edited by |
Y. Limoge and J.L. Bocquet |
| Pages |
493-510 |
| DOI |
10.4028/www.scientific.net/MSF.155-156.493 |
| Citation |
B. Leroy et al., 1994, Materials Science Forum, 155-156, 493 |
| Authors |
B. Leroy, T. Vanneste |
| Keywords |
Carbon, Device Technology, Emitter, Epitaxy, Gain, Interface, Interface Layer, Interface States (or Traps), Life Time, Oxygen, Poly-Silicon, Resistance, Silicon, Tunnelling |
| Full Paper |
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