Paper Title:
Modification of Foreign Atom Concentrations and Profiles in Silicon and Si1-x-y GexCy Alloys by Laser Chemical Etching
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 173-174)
Edited by
M. Briege, H. Dittrich, M. Klose, H.W. Schock, J. Werner
Pages
23-28
DOI
10.4028/www.scientific.net/MSF.173-174.23
Citation
J. Boulmer, A. Desmur, B. Bourguignon, J.-B. Ozenne, R. Laval, A. Aliouchouche, D. Débarre, J.-P. Budin, "Modification of Foreign Atom Concentrations and Profiles in Silicon and Si1-x-y GexCy Alloys by Laser Chemical Etching ", Materials Science Forum, Vols. 173-174, pp. 23-28, 1995
Online since
September 1994
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$32.00
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