Modification of Foreign Atom Concentrations and Profiles in Silicon and Si1-x-y GexCy Alloys by Laser Chemical Etching |
| Journal |
Materials Science Forum (Volumes 173 - 174) |
| Volume |
Semiconductor Processing and Characterization with Lasers |
| Edited by |
M. Briege, H. Dittrich, M. Klose, H.W. Schock, J. Werner |
| Pages |
23-28 |
| DOI |
10.4028/www.scientific.net/MSF.173-174.23 |
| Citation |
J. Boulmer et al., 1994, Materials Science Forum, 173-174, 23 |
| Authors |
J. Boulmer, A. Desmur, B. Bourguignon, J.-B. Ozenne, R. Laval, A. Aliouchouche, D. Débarre, J.-P. Budin |
| Keywords |
Chemisorption, Energy Dispersive X-Ray (EDX), Etching, Laser Desorption, Laser Etching, Laser Melting, SiGeC, Silicon, Silicon-Germanium (SiGe), SIMS |
| Full Paper |
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