Paper Title:
Raman Study of "Boson Peak" in Amorphous Silicon: Dependence on Hydrogen and Carbon Content
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 173-174)
Edited by
M. Briege, H. Dittrich, M. Klose, H.W. Schock, J. Werner
Pages
243-248
DOI
10.4028/www.scientific.net/MSF.173-174.243
Citation
M. Ivanda, I. Hartmann, F. Duschek, W. Kiefer, "Raman Study of "Boson Peak" in Amorphous Silicon: Dependence on Hydrogen and Carbon Content", Materials Science Forum, Vols. 173-174, pp. 243-248, 1995
Online since
September 1994
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