Properties of Recrystallized Amorphous Silicon Prepared by XeCl Excimer Laser Irradiation |
| Journal |
Materials Science Forum (Volumes 173 - 174) |
| Volume |
Semiconductor Processing and Characterization with Lasers |
| Edited by |
M. Briege, H. Dittrich, M. Klose, H.W. Schock, J. Werner |
| Pages |
29-34 |
| DOI |
10.4028/www.scientific.net/MSF.173-174.29 |
| Citation |
I. Ulrych et al., 1994, Materials Science Forum, 173-174, 29 |
| Authors |
I. Ulrych, K.M.A. El-Kader, V. Cháb, J. Kocka, P. Prikryl, V. Vydra, R. Cerný |
| Keywords |
a-Si:H, Excimer Laser, Mathematical Model, Recrystallization, Scanning Electron Microscope (SEM), TRR |
| Full Paper |
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