Paper Title:
Thermal Evolution of Defects in H-Implanted Silicon Investigated by Slow Positrons
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 175-178)
Edited by
Yuan-Jin He, Bi-Song Cao and Y.C. Jean
Pages
141-144
DOI
10.4028/www.scientific.net/MSF.175-178.141
Citation
R. S. Brusa, A. Zecca, X. T. Meng, G. Ottaviani, R. Tonini, "Thermal Evolution of Defects in H-Implanted Silicon Investigated by Slow Positrons", Materials Science Forum, Vols. 175-178, pp. 141-144, 1995
Online since
November 1994
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