Paper Title:
Study on InP Doped with Sulphur by Positron Annihilation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 175-178)
Edited by
Yuan-Jin He, Bi-Song Cao and Y.C. Jean
Pages
383-386
DOI
10.4028/www.scientific.net/MSF.175-178.383
Citation
M. R. Huang, Y.Y. Wang, J. H. Yang, Y.-S. He, Y. H. Guo, T.-N. Sun, "Study on InP Doped with Sulphur by Positron Annihilation", Materials Science Forum, Vols. 175-178, pp. 383-386, 1995
Online since
November 1994
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Price
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