Defects in Semiconductors: Recent Progress in Positron Experiments |
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| Journal | Materials Science Forum (Volumes 175 - 178) |
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| Volume | Positron Annihilation - ICPA-10 |
| Edited by | Yuan-Jin He, Bi-Song Cao and Y.C. Jean |
| Pages | 47-58 |
| DOI | 10.4028/www.scientific.net/MSF.175-178.47 |
| Authors | Pekka J. Hautojärvi |
| Keywords | AlxGa1-xAs, DX Center, El2 Defect, GaAs, Positron Diffusion Coefficient, Positron Mobility, Positron Trapping Coefficient, Vacancies in GaAs |
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