Defects in Semiconductors: Recent Progress in Positron Experiments |
| Journal |
Materials Science Forum (Volumes 175 - 178) |
| Volume |
Positron Annihilation - ICPA-10 |
| Edited by |
Yuan-Jin He, Bi-Song Cao and Y.C. Jean |
| Pages |
47-58 |
| DOI |
10.4028/www.scientific.net/MSF.175-178.47 |
| Citation |
Pekka J. Hautojärvi, 1994, Materials Science Forum, 175-178, 47 |
| Authors |
Pekka J. Hautojärvi |
| Keywords |
AlxGa1-xAs, DX Center, El2 Defect, GaAs, Positron Diffusion Coefficient, Positron Mobility, Positron Trapping Coefficient, Vacancies in GaAs |
| Full Paper |
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