Paper Title:
Positron Mobility and Interface Defect Studies in Semi-Insulating GaAs Using the Lifetime Technique
  Abstract

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Periodical
Materials Science Forum (Volumes 175-178)
Edited by
Yuan-Jin He, Bi-Song Cao and Y.C. Jean
Pages
517-520
DOI
10.4028/www.scientific.net/MSF.175-178.517
Citation
Y.Y. Shan, C.C. Ling, H.L. Au, S. Fung, C.D. Beling, Y.Y. Wang, "Positron Mobility and Interface Defect Studies in Semi-Insulating GaAs Using the Lifetime Technique", Materials Science Forum, Vols. 175-178, pp. 517-520, 1995
Online since
November 1994
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Price
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