Paper Title:
Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 182-184)
Edited by
H. Heinrich and J.B. Mullin
Pages
69-72
DOI
10.4028/www.scientific.net/MSF.182-184.69
Citation
H. Saito, M. Yoneta, M. Ohishi, H. Kobashi, C. Hatano, K. Kitani, "Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy", Materials Science Forum, Vols. 182-184, pp. 69-72, 1995
Online since
February 1995
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