Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy |
|
| Journal | Materials Science Forum (Volumes 182 - 184) |
|---|---|
| Volume | II-VI Compounds and Semimagnetic Semiconductors |
| Edited by | H. Heinrich and J.B. Mullin |
| Pages | 69-72 |
| DOI | 10.4028/www.scientific.net/MSF.182-184.69 |
| Citation | H. Saito et al., 1995, Materials Science Forum, 182-184, 69 |
| Authors | H. Saito, M. Yoneta, Masanori Ohishi, H. Kobashi, C. Hatano, K. Kitani |
| Full Paper | 
Get the full paper by clicking here
|
First page example
