HOME CONTACT

Username: Password:

> @scientific.net

Passivation of Metals and Semiconductors

Materials Science Forum Volumes 185 - 188

• Papers
• Abstracts

• p3 A Summary of the Passivity Symposium   [ 196 K ]
  Authors: H.L. Hartnagel, W.J. Plieth
• p9 Fundamental Aspects of the Passivation of Metals and Semiconductors   [ 596 K ]
  Authors: K.E. Heusler
• p23 Passivation and Control of Semiconductor Interfaces by Interface Control Layers   [ 618 K ]
  Authors: Hisashi Hasegawa
• p37 A comparison of the Oxidation and Passivation of Si, Ge and InP   [ 276 K ]
  Authors: E.A. Irene
• p43 Laser Interferometry and SMX-Techniques for Thermal Characterization of Thin Films   [ 599 K ]
  Authors: E. Oesterschulze, L. Hadjiiski, M. Stopka, R. Kassing
• p53 Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy   [ 199 K ]
  Authors: T. Saitoh, Hisashi Hasegawa
• p59 Non-Steady State C-V Methods for Determination of Interface State Parameters   [ 187 K ]
  Authors: K.L. Temnikov, I.A. Uritskaya
• p65 Composition, Structure and Modification of Passivating Films on Semiconductors Deposited at Low Temperatures   [ 267 K ]
  Authors: Mikhail R. Baklanov, L.L. Vasilyeva
• p73 Passivity and electronic properties of the silicon/silicondioxide interface   [ 633 K ]
  Authors: H. Flietner
• p83 Electrochemical and Electronic Passivation by Hydrogenation of n-Si(111)   [ 272 K ]
  Authors: J. Rappich, H.J. Lewerenz
• p91 Influence of Tunneling on Trapping Kinetics in Thin Layers   [ 235 K ]
  Authors: S. Scharf, M. Schmidt, D. Bräunig
• p99 On the Nature of the Radiation-Induced Failure of Si-SiO₂ Structures Annealed in Hydrogen   [ 201 K ]
  Authors: S.N. Kuznetsov, V.A. Gurtov
• p105 Characteristics of Si-SiO₂ Systems Obtained by Thermal Oxidation of Silicon Surface Covered with Silicon-Hydrogen Layers   [ 159 K ]
  Authors: V.Y. Uritsky, B.B. Loginov
• p109 Passivation and Depassivation of Electrically Active Centers in the Polysilicon-Oxide-Silicon Structures   [ 365 K ]
  Authors: I.A. Uritskaya, V.Y. Uritsky
• p115 Role of Electron / Hole Processes in the Initial Stage of Silicon Anodization   [ 258 K ]
  Authors: V.X. Uritsky