Characteristics of Si-SiO2 Systems Obtained by Thermal Oxidation of Silicon Surface Covered with Silicon-Hydrogen Layers |
| Journal |
Materials Science Forum (Volumes 185 - 188) |
| Volume |
Passivation of Metals and Semiconductors |
| Edited by |
K.E. Heusler |
| Pages |
105-108 |
| DOI |
10.4028/www.scientific.net/MSF.185-188.105 |
| Citation |
V.Y. Uritsky et al., 1995, Materials Science Forum, 185-188, 105 |
| Authors |
V.Y. Uritsky, B.B. Loginov |
| Keywords |
Dissolution, Fixed Oxide Charge, Silicon Network, Silicon-Hydrogen Layer, Si-SiO2 System, Sulphur Content, Thermal Oxidation |
| Full Paper |
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