Characteristics of Si-SiO2 Systems Obtained by Thermal Oxidation of Silicon Surface Covered with Silicon-Hydrogen Layers |
|
| Journal | Materials Science Forum (Volumes 185 - 188) |
|---|---|
| Volume | Passivation of Metals and Semiconductors |
| Edited by | K.E. Heusler |
| Pages | 105-108 |
| DOI | 10.4028/www.scientific.net/MSF.185-188.105 |
| Authors | V.Y. Uritsky, B.B. Loginov |
| Keywords | Dissolution, Fixed Oxide Charge, Silicon Network, Silicon-Hydrogen Layer, Si-SiO2 System, Sulphur Content, Thermal Oxidation |
| Full Paper | 
Get the full paper by clicking here
|