Passivation and Depassivation of Electrically Active Centers in the Polysilicon-Oxide-Silicon Structures |
| Journal |
Materials Science Forum (Volumes 185 - 188) |
| Volume |
Passivation of Metals and Semiconductors |
| Edited by |
K.E. Heusler |
| Pages |
109-114 |
| DOI |
10.4028/www.scientific.net/MSF.185-188.109 |
| Citation |
I.A. Uritskaya et al., 1995, Materials Science Forum, 185-188, 109 |
| Authors |
I.A. Uritskaya, V.Y. Uritsky |
| Keywords |
C-V Measurement, Depassivation, Electrically Active Centers, High Electric Field Stress, Passivation, PolySi-Sio2-Si Structure, Trap Density, Undoped Poly-Si Gate |
| Full Paper |
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