Role of Electron / Hole Processes in the Initial Stage of Silicon Anodization |
| Journal |
Materials Science Forum (Volumes 185 - 188) |
| Volume |
Passivation of Metals and Semiconductors |
| Edited by |
K.E. Heusler |
| Pages |
115-118 |
| DOI |
10.4028/www.scientific.net/MSF.185-188.115 |
| Citation |
V.X. Uritsky, 1995, Materials Science Forum, 185-188, 115 |
| Authors |
V.X. Uritsky |
| Keywords |
Anodization, Avalanche, Current Efficiency, Electrically Active Centers, Hole Traps Density, Ionic Current, Kinetics of Oxidation, MOS Structure, Si-SiO2 Interface |
| Full Paper |
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