Paper Title:
AES Study of the GaAs-Germanium Oxynitride Interface
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 185-188)
Edited by
K.E. Heusler
Pages
165-170
DOI
10.4028/www.scientific.net/MSF.185-188.165
Citation
D. Jishiashvili, R. Dzhanelidze, Z. Shiolashvili, I. Nakhutsrishvili, "AES Study of the GaAs-Germanium Oxynitride Interface", Materials Science Forum, Vols. 185-188, pp. 165-170, 1995
Online since
March 1995
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Price
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