Paper Title:
Silicon Nitride and Oxide Deposited by Direct Photolysis on Sulfur Treated GaAs and InP: Application to III-V Passivation
  Abstract

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Periodical
Materials Science Forum (Volumes 185-188)
Edited by
K.E. Heusler
Pages
185-190
DOI
10.4028/www.scientific.net/MSF.185-188.185
Citation
N. Proust, G. Guillot, M. Petitjean, M. Beguet, J.F. Chapeaublanc, J. Perrin, "Silicon Nitride and Oxide Deposited by Direct Photolysis on Sulfur Treated GaAs and InP: Application to III-V Passivation ", Materials Science Forum, Vols. 185-188, pp. 185-190, 1995
Online since
March 1995
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Price
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