Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy |
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| Journal | Materials Science Forum (Volumes 185 - 188) |
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| Volume | Passivation of Metals and Semiconductors |
| Edited by | K.E. Heusler |
| Pages | 53-58 |
| DOI | 10.4028/www.scientific.net/MSF.185-188.53 |
| Citation | T. Saitoh et al., 1995, Materials Science Forum, 185-188, 53 |
| Authors | T. Saitoh, Hisashi Hasegawa |
| Keywords | Interface Control Layer, Interface States (or Traps), Photoluminescence (PL), Surface Recombination Velocity, Surface State Density |
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