Passivity and electronic properties of the silicon/silicondioxide interface |
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| Journal | Materials Science Forum (Volumes 185 - 188) |
|---|---|
| Volume | Passivation of Metals and Semiconductors |
| Edited by | K.E. Heusler |
| Pages | 73-82 |
| DOI | 10.4028/www.scientific.net/MSF.185-188.73 |
| Citation | H. Flietner, 1995, Materials Science Forum, 185-188, 73 |
| Authors | H. Flietner |
| Keywords | Chemical Reaction, Luminescence, Natural Oxidation, Nature of Interface Defects, Recombination |
| Full Paper | 
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