Electrochemical and Electronic Passivation by Hydrogenation of n-Si(111) |
| Journal |
Materials Science Forum (Volumes 185 - 188) |
| Volume |
Passivation of Metals and Semiconductors |
| Edited by |
K.E. Heusler |
| Pages |
83-90 |
| DOI |
10.4028/www.scientific.net/MSF.185-188.83 |
| Citation |
J. Rappich et al., 1995, Materials Science Forum, 185-188, 83 |
| Authors |
J. Rappich, H.J. Lewerenz |
| Keywords |
In Situ, Density of Interface States, FTIR Spectroscopy, Hydrogen Passivation, Photocurrent Oscillations, Silicon, Surface Photovoltage |
| Full Paper |
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