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Electrochemical and Electronic Passivation by Hydrogenation of n-Si(111)

Journal Materials Science Forum (Volumes 185 - 188)
Volume Passivation of Metals and Semiconductors
Edited by K.E. Heusler
Pages 83-90
DOI 10.4028/www.scientific.net/MSF.185-188.83
Citation J. Rappich et al., 1995, Materials Science Forum, 185-188, 83
Authors J. Rappich, H.J. Lewerenz
Keywords In Situ, Density of Interface States, FTIR Spectroscopy, Hydrogen Passivation, Photocurrent Oscillations, Silicon, Surface Photovoltage
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