Influence of Tunneling on Trapping Kinetics in Thin Layers |
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| Journal | Materials Science Forum (Volumes 185 - 188) |
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| Volume | Passivation of Metals and Semiconductors |
| Edited by | K.E. Heusler |
| Pages | 91-98 |
| DOI | 10.4028/www.scientific.net/MSF.185-188.91 |
| Citation | S. Scharf et al., 1995, Materials Science Forum, 185-188, 91 |
| Authors | S. Scharf, M. Schmidt, D. Bräunig |
| Keywords | Hole Traps, Interface, Si/SiO2, Trapping Kinetics, Tunneling |
| Full Paper | 
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