On the Nature of the Radiation-Induced Failure of Si-SiO2 Structures Annealed in Hydrogen |
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| Journal | Materials Science Forum (Volumes 185 - 188) |
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| Volume | Passivation of Metals and Semiconductors |
| Edited by | K.E. Heusler |
| Pages | 99-104 |
| DOI | 10.4028/www.scientific.net/MSF.185-188.99 |
| Authors | S.N. Kuznetsov, V.A. Gurtov |
| Keywords | Capacitance-Voltage Method, Ionizing Radiation Effect, MOS Capacitor, Positive Charge Buildup, Postoxidation Annealing, Radiation Stability, Si-SiO2 Interface State Generation |
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