On the Nature of the Radiation-Induced Failure of Si-SiO2 Structures Annealed in Hydrogen |
| Journal |
Materials Science Forum (Volumes 185 - 188) |
| Volume |
Passivation of Metals and Semiconductors |
| Edited by |
K.E. Heusler |
| Pages |
99-104 |
| DOI |
10.4028/www.scientific.net/MSF.185-188.99 |
| Citation |
S.N. Kuznetsov et al., 1995, Materials Science Forum, 185-188, 99 |
| Authors |
S.N. Kuznetsov, V.A. Gurtov |
| Keywords |
Capacitance-Voltage Method, Ionizing Radiation Effect, MOS Capacitor, Positive Charge Buildup, Postoxidation Annealing, Radiation Stability, Si-SiO2 Interface State Generation |
| Full Paper |
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