Main Theme:

Defects in Semiconductors 18

Volumes 196 - 201
doi: 10.4028/www.scientific.net/MSF.196-201
Paper Titles published in this Main Theme:
Paper Title Page

Unified Theory of Defects in Insulators

Authors: Y. Toyozawa

1

Optical and Magnetic Resonance Studies of Defects in GaN

Authors: E.R. Glaser

9

The Effective Mass Donor in Galliumnitride

Authors: H.C. Alt, B.K. Meyer, D. Volm, A. Graber, M. Drechsler, D.M. Hofmann, T. Detchprohm, A. Amano, Isamu Akasaki

17

Free Electrons and Resonant Donor State in Gallium Nitride

Authors: P. Perlin, T. Suski, H. Teisseyre, M. Leszczyński, I. Grzegory, J. Jun, M. Boćkowski, Sylwester Porowski, P. Boguslawski, J. Bernholc, T.D. Moustakas

23

Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based Heterostructures

Authors: W.E. Carlos, E.R. Glaser, T.A. Kennedy, Satoshi Nakamura

25

Carrier Localization in Gallium Nitride

Authors: C. Wetzel, W. Walukiewicz, Eugene E. Haller, J.W. Ager, A. Chen, S. Fischer, P.Y. Yu, R. Jeanloz, I. Grzegory, Sylwester Porowski, T. Suski, Hiroshi Amano, Isamu Akasaki

31

Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films

Authors: F.K. Koschnick, Johann Martin Spaeth, E.R. Glaser, K. Doverspike, L.B. Rowland, D. Kurt Gaskill, D.K. Wickenden

37

Luminescence of Doped and Undoped Bulk Crystals of GaN

Authors: H. Teisseyre, T. Suski, P. Perlin, I. Gorczyca, M. Leszczyński, I. Grzegory, J. Jun, Sylwester Porowski

43

Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy

Authors: Gyu-Chul Yi, Bruce W. Wessels

49

Charactrization of Residual Transition Metal Ions in GaN and AIN

Authors: J. Baur, Ulrich Kaufmann, M. Kunzer, J. Schneider, Hiroshi Amano, Isamu Akasaki, T. Detchprohm, K. Hiramatsu

55

Showing 1 to 10 of 335 Paper Titles