Theory of Interstitial Oxygen in Silicon and Germanium |
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| Journal | Materials Science Forum (Volumes 196 - 201) |
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| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 103-108 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.103 |
| Citation | E. Artacho et al., 1995, Materials Science Forum, 196-201, 103 |
| Authors | E. Artacho, F. Yndurain |
| Keywords | Oxygen in Covalent Semiconductors |
| Full Paper | 
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