Paper Title:
Nonradiative Investigations of Photoquenching and Recovery of EL2 Defect Levels in Si-GaAs
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1031-1036
DOI
10.4028/www.scientific.net/MSF.196-201.1031
Citation
A. Fukayama, T. Ikari, Y. Akashi, K. Futagami, "Nonradiative Investigations of Photoquenching and Recovery of EL2 Defect Levels in Si-GaAs", Materials Science Forum, Vols. 196-201, pp. 1031-1036, 1995
Online since
November 1995
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