Impurity Behavior during Si Single Crystal Growth from the Melt |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
109-114 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.109 |
| Citation |
T. Izumi et al., 1995, Materials Science Forum, 196-201, 109 |
| Authors |
T. Izumi, H. Morita, T. Fujiwara, H. Fujiwara, S. Inami |
| Keywords |
Crystal Growth, CZ Method, Diffusion, Segregation, Solidification |
| Full Paper |
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