Paper Title:
Impurity Behavior during Si Single Crystal Growth from the Melt
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
109-114
DOI
10.4028/www.scientific.net/MSF.196-201.109
Citation
T. Izumi, H. Morita, T. Fujiwara, H. Fujiwara, S. Inami, "Impurity Behavior during Si Single Crystal Growth from the Melt", Materials Science Forum, Vols. 196-201, pp. 109-114, 1995
Online since
November 1995
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Price
$32.00
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