Paper Title:
A Bistable Defect in Si-Doped Al0.3Ga0.7As
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1097-1102
DOI
10.4028/www.scientific.net/MSF.196-201.1097
Citation
M.M. Sobolev, I.V. Kochnev, M.I. Papentsev, V.S. Kalinovsky, "A Bistable Defect in Si-Doped Al0.3Ga0.7As", Materials Science Forum, Vols. 196-201, pp. 1097-1102, 1995
Online since
November 1995
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Price
$32.00
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