Paper Title:
Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1117-1122
DOI
10.4028/www.scientific.net/MSF.196-201.1117
Citation
G. Weyer, M. Fanciulli, K. Freitag, A. Nylandsted-Larsen, M. Lindroos, E. Müller, H.C. Vestergaard, "Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments", Materials Science Forum, Vols. 196-201, pp. 1117-1122, 1995
Online since
November 1995
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