Paper Title:
Analysis of the Recombination-Active Region Around Extended Defects in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1123-1128
DOI
10.4028/www.scientific.net/MSF.196-201.1123
Citation
M. Kittler, W. Seifert, "Analysis of the Recombination-Active Region Around Extended Defects in Silicon", Materials Science Forum, Vols. 196-201, pp. 1123-1128, 1995
Online since
November 1995
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Price
$32.00
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