Paper Title:
On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1147-1152
DOI
10.4028/www.scientific.net/MSF.196-201.1147
Citation
M.-A. Trauwaert, J. Vanhellemont, H.E. Maes, A.-M. Van Bavel, G. Langouche, A. Stesmans, P. Clauws, "On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.", Materials Science Forum, Vols. 196-201, pp. 1147-1152, 1995
Online since
November 1995
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Price
$32.00
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