Lattice Sites of Li in Si and Ge |
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| Journal | Materials Science Forum (Volumes 196 - 201) |
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| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 115-120 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.115 |
| Citation | Ulrich Wahl et al., 1995, Materials Science Forum, 196-201, 115 |
| Authors | Ulrich Wahl, S.G. Jahn, M. Restle, H. Quintel, H. Hofsäss |
| Keywords | Ge, Ion-Implantation, Lattice Location, Li, Silicon |
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