Paper Title:
Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy
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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1165-1170
DOI
10.4028/www.scientific.net/MSF.196-201.1165
Citation
M. Fujinami, S. Hayashi, "Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy", Materials Science Forum, Vols. 196-201, pp. 1165-1170, 1995
Online since
November 1995
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