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Oscillator Strengths and Linewidths of Shallow Impurity Spectra in Si and Ge

Journal Materials Science Forum (Volumes 196 - 201)
Volume Defects in Semiconductors 18
Edited by M. Suezawa and H. Katayama-Yoshida
Pages 121-126
DOI 10.4028/www.scientific.net/MSF.196-201.121
Citation Boris A. Andreev et al., 1995, Materials Science Forum, 196-201, 121
Authors Boris A. Andreev, E.B. Kozlov, T.M. Lifshits
Keywords Ge, Infrared Absorption, PTIS, Shallow Impurity, Silicon
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