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Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As

Journal Materials Science Forum (Volumes 196 - 201)
Volume Defects in Semiconductors 18
Edited by M. Suezawa and H. Katayama-Yoshida
Pages 127-132
DOI 10.4028/www.scientific.net/MSF.196-201.127
Citation K.M. Itoh et al., 1995, Materials Science Forum, 196-201, 127
Authors K.M. Itoh, W. Walukiewicz, J.W. Beeman, Eugene E. Haller, Hyun Jung Kim, A.J. Mayur, M.D. Sciacca, A.K. Ramdas, Ryszard Buczko, J.W. Farmer, V.I. Ozhogin
Keywords Compensation, Impurities in Semiconductors, Infrared Absorption
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