Paper Title:
First Principles Investigation of Vacancy Oxygen Defects in Si
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1297-1302
DOI
10.4028/www.scientific.net/MSF.196-201.1297
Citation
C.P. Ewels, R. Jones, S. Öberg, "First Principles Investigation of Vacancy Oxygen Defects in Si", Materials Science Forum, Vols. 196-201, pp. 1297-1302, 1995
Online since
November 1995
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Price
$32.00
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