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Effect of Carbon on Thermal Double Donor Formation in Silicon

Journal Materials Science Forum (Volumes 196 - 201)
Volume Defects in Semiconductors 18
Edited by M. Suezawa and H. Katayama-Yoshida
Pages 1315-1320
DOI 10.4028/www.scientific.net/MSF.196-201.1315
Citation L.I. Murin et al., 1995, Materials Science Forum, 196-201, 1315
Authors L.I. Murin, V.P. Markevich
Keywords Carbon, Oxygen, Silicon, Thermal Double Donors
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