Carbon Induced Inhomogeneous Strain Splitting of the Phosphorus Bound Exciton Line in Silicon |
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| Journal | Materials Science Forum (Volumes 196 - 201) |
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| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 133-138 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.133 |
| Citation | A.N. Safonov et al., 1995, Materials Science Forum, 196-201, 133 |
| Authors | A.N. Safonov, Edward C. Lightowlers, Gordon Davies |
| Keywords | Bound Exciton, Carbon, Line-Broadening, Silicon |
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