Paper Title:
Recombination-Enhanced Migration of Interstitial Iron in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1351-1356
DOI
10.4028/www.scientific.net/MSF.196-201.1351
Citation
H. Nakashima, T. Sadoh, T. Tsurushima, "Recombination-Enhanced Migration of Interstitial Iron in Silicon", Materials Science Forum, Vols. 196-201, pp. 1351-1356, 1995
Online since
November 1995
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Price
$32.00
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