Paper Title:
Reactions between Point Defects in Silicon Doped with Germanium
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1381-1384
DOI
10.4028/www.scientific.net/MSF.196-201.1381
Citation
L. I. Khirunenko, V.I. Shakhovtsov, V.V. Shumov, V.I. Yashnik, "Reactions between Point Defects in Silicon Doped with Germanium", Materials Science Forum, Vols. 196-201, pp. 1381-1384, 1995
Online since
November 1995
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Price
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