Paper Title:
Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1407-1412
DOI
10.4028/www.scientific.net/MSF.196-201.1407
Citation
H. Nakanishi, K. Wada, "Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect", Materials Science Forum, Vols. 196-201, pp. 1407-1412, 1995
Online since
November 1995
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.