Paper Title:
Excitons Bound to Isoelectronic C3V-Defects B480 (1.1068 eV) in Silicon
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
145-150
DOI
10.4028/www.scientific.net/MSF.196-201.145
Citation
A.S. Kaminskii, E.V. Lavrov, "Excitons Bound to Isoelectronic C3V-Defects B480 (1.1068 eV) in Silicon", Materials Science Forum, Vols. 196-201, pp. 145-150, 1995
Online since
November 1995
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Price
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