Excitons Bound to Isoelectronic C3V-Defects B480 (1.1068 eV) in Silicon |
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| Journal | Materials Science Forum (Volumes 196 - 201) |
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| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 145-150 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.145 |
| Citation | A.S. Kaminskii et al., 1995, Materials Science Forum, 196-201, 145 |
| Authors | A.S. Kaminskii, E.V. Lavrov |
| Keywords | Bound Exciton, Isoelectronic Defects, Silicon |
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