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Defect Production and Annealing in Degenerate Silicon Irradiated with fast Electrons at Low Temperatures

Journal Materials Science Forum (Volumes 196 - 201)
Volume Defects in Semiconductors 18
Edited by M. Suezawa and H. Katayama-Yoshida
Pages 151-156
DOI 10.4028/www.scientific.net/MSF.196-201.151
Citation Peter Ehrhart et al., 1995, Materials Science Forum, 196-201, 151
Authors Peter Ehrhart, Valentin V. Emtsev, D.S. Poloskin, Holger Zillgen
Keywords Irradiation, Point Defect, Silicon
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