Paper Title:
The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1515-1520
DOI
10.4028/www.scientific.net/MSF.196-201.1515
Citation
A.-M. Van Bavel, S. Degroote, A. Vantomme, A. Stesmans, G. Langouche, "The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si", Materials Science Forum, Vols. 196-201, pp. 1515-1520, 1995
Online since
November 1995
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Price
$32.00
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