Paper Title:
Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C
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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
157-162
DOI
10.4028/www.scientific.net/MSF.196-201.157
Citation
Y. Shi, M. Suezawa, F. M. Wu, M. Imai, Y.D. Zheng, K. Sumino, "Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C", Materials Science Forum, Vols. 196-201, pp. 157-162, 1995
Online since
November 1995
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