Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
157-162 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.157 |
| Citation |
Y. Shi et al., 1995, Materials Science Forum, 196-201, 157 |
| Authors |
Y. Shi, Masashi Suezawa, Feng Mei Wu, M. Imai, Y.D. Zheng, Koji Sumino |
| Keywords |
Infrared Absorption, Radiation Defect, Silicon |
| Full Paper |
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