Paper Title:
Dopant Diffusion and Stacking Fault in Silicon during Thermal Oxidation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1631-1636
DOI
10.4028/www.scientific.net/MSF.196-201.1631
Citation
T. Okino, R. Takaue, M. Onishi, "Dopant Diffusion and Stacking Fault in Silicon during Thermal Oxidation", Materials Science Forum, Vols. 196-201, pp. 1631-1636, 1995
Online since
November 1995
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Price
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