Influence of Simultaneously Implanted As+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted into Silicon |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
1637-1642 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.1637 |
| Citation |
Katsuhiro Yokota et al., 1995, Materials Science Forum, 196-201, 1637 |
| Authors |
Katsuhiro Yokota, T. Nakamura, Fumiyoshi Miyashita, K. Hirai, H. Takano, Mikito Kumagai, Yasuo Ando, Kouji Matsuda |
| Keywords |
Activity, Diffusion, Impurity, Silicon |
| Full Paper |
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