Paper Title:
Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1643-1648
DOI
10.4028/www.scientific.net/MSF.196-201.1643
Citation
N. H. Ky, "Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures", Materials Science Forum, Vols. 196-201, pp. 1643-1648, 1995
Online since
November 1995
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Price
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