Defects in Porous Silicon: A Study with Optical and Spin Resonance Methodes |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
1673-1678 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.1673 |
| Citation |
D.M. Hofmann et al., 1995, Materials Science Forum, 196-201, 1673 |
| Authors |
D.M. Hofmann, B.K. Meyer, P. Christmann, T. Wimbauer, W. Stadler, A. Nikolov, A. Scharmann, A. Hofstätter |
| Keywords |
Dangling Bond, Electron Paramagnetic Resonance (EPR), Hydrogen, Porous Si |
| Full Paper |
Get the full paper by clicking here
|
