The Effective Mass Donor in Galliumnitride |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
17-22 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.17 |
| Citation |
H.C. Alt et al., 1995, Materials Science Forum, 196-201, 17 |
| Authors |
H.C. Alt, B.K. Meyer, D. Volm, A. Graber, M. Drechsler, D.M. Hofmann, T. Detchprohm, A. Amano, Isamu Akasaki |
| Keywords |
Binding Energy, Electron Effective Mass, Galium Nitride (GaN), Shallow Donors |
| Full Paper |
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