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The Effective Mass Donor in Galliumnitride

Journal Materials Science Forum (Volumes 196 - 201)
Volume Defects in Semiconductors 18
Edited by M. Suezawa and H. Katayama-Yoshida
Pages 17-22
DOI 10.4028/www.scientific.net/MSF.196-201.17
Citation H.C. Alt et al., 1995, Materials Science Forum, 196-201, 17
Authors H.C. Alt, B.K. Meyer, D. Volm, A. Graber, M. Drechsler, D.M. Hofmann, T. Detchprohm, A. Amano, Isamu Akasaki
Keywords Binding Energy, Electron Effective Mass, Galium Nitride (GaN), Shallow Donors
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