The Effective Mass Donor in Galliumnitride |
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| Journal | Materials Science Forum (Volumes 196 - 201) |
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| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 17-22 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.17 |
| Authors | H.C. Alt, B.K. Meyer, D. Volm, A. Graber, M. Drechsler, D.M. Hofmann, T. Detchprohm, A. Amano, Isamu Akasaki |
| Keywords | Binding Energy, Electron Effective Mass, Galium Nitride (GaN), Shallow Donors |
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