Paper Title:
Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1731-1736
DOI
10.4028/www.scientific.net/MSF.196-201.1731
Citation
T. Iwasaki, H. Harada, H. Haga, "Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity", Materials Science Forum, Vols. 196-201, pp. 1731-1736, 1995
Online since
November 1995
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Price
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