Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
1779-1784 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.1779 |
| Citation |
T. Soga et al., 1995, Materials Science Forum, 196-201, 1779 |
| Authors |
T. Soga, M Yang, Tomohisa Kato, Takashi Jimbo, Masayoshi Umeno |
| Keywords |
AlGaAs-on-Si, Dislocation, GaAs-on-Si, Solar Cell |
| Full Paper |
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