Paper Title:
Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1779-1784
DOI
10.4028/www.scientific.net/MSF.196-201.1779
Citation
T. Soga, M. Yang, T. Kato, T. Jimbo, M. Umeno, "Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell", Materials Science Forum, Vols. 196-201, pp. 1779-1784, 1995
Online since
November 1995
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Price
$32.00
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