Paper Title:
Study of the Dislocation Atmospheres in N-Type GaAs by DSL Photoetching, EBIC and Microraman Measurements
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1791-1796
DOI
10.4028/www.scientific.net/MSF.196-201.1791
Citation
P. Martín, J. Jiménez, C. Frigeri, J. Weyher, K. Sonnenberg, "Study of the Dislocation Atmospheres in N-Type GaAs by DSL Photoetching, EBIC and Microraman Measurements", Materials Science Forum, Vols. 196-201, pp. 1791-1796, 1995
Online since
November 1995
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Price
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